IGBT transistor

In stock

IGBT transistor

Easy paralleling due to the superb temperature coefficient of the on-state voltage
Rugged eXtreme-light Punch Through (XPT™) sketch effects in:

– brief circuit rated for 10µs.
– very low gate charge
– low EMI
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Description

Features:
Easy paralleling due to the superb temperature coefficient of the on-state voltage
Rugged eXtreme-light Punch Through (XPT™) sketch effects in:

– brief circuit rated for 10µs.
– very low gate charge
– low EMI
– rectangular Reverse Bias Safe Operating Areas (RBSOA) up to breakdown voltages
Thin wafer science mixed with the SPT graph effects in a aggressive low VCE(sat)
SONIC-FRD™ diode

Specification

Additional information

Type

IGBT

Technology

power

Country

USA

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