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IGBT transistor
IGBT transistor
Easy paralleling due to the superb temperature coefficient of the on-state voltage
Rugged eXtreme-light Punch Through (XPT™) sketch effects in:
– brief circuit rated for 10µs.
– very low gate charge
– low EMI
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Description
Features:
Easy paralleling due to the superb temperature coefficient of the on-state voltage
Rugged eXtreme-light Punch Through (XPT™) sketch effects in:
– brief circuit rated for 10µs.
– very low gate charge
– low EMI
– rectangular Reverse Bias Safe Operating Areas (RBSOA) up to breakdown voltages
Thin wafer science mixed with the SPT graph effects in a aggressive low VCE(sat)
SONIC-FRD™ diode
Specification
Additional information
| Type | IGBT |
|---|---|
| Technology | power |
| Country | USA |
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